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in-situ CVD法によって成長したCr・Si系単結晶


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Title: in-situ CVD法によって成長したCr・Si系単結晶
Other Titles: Single Crystals of Cr . Si System grown by in-situ CVD Process
Authors: 岩永, 浩 / 柴田, 昇 / 元島, 栖二 / 広松, 一男 / 上原, 勝景
Authors (alternative): Iwanaga, Hiroshi / Shibata, Noboru / Motojima, Seiji / Hiromatsu, Kazuo / Uehara, Katuaki
Issue Date: Jul-1989
Citation: 長崎大学教養部紀要. 自然科学篇. 1989, 30(1), p.11-17
Abstract: Single crystals of Cr・Si system have been grown by in-situ CVD process. They were classfied into three types ; (1) hollow pillar crystals of Cr_3Si_2 composition which have the tetragonal structure and a rectangular cross section, (2) hollow hexagonal pillars of Cr_5Si_3 composition with the hexagonal structure and (3) polyhedral crystals of Cr_3Si composition which have the cubic structure and {110} facets. Morphological studies of these crystals were carried out by SEM. Their crystal system and lattice constant were determined by X-ray methods.
URI: http://hdl.handle.net/10069/16599
ISSN: 02871319
Type: Departmental Bulletin Paper
Text Version: publisher
Appears in Collections:Volume 30, No. 1

Citable URI : http://hdl.handle.net/10069/16599

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