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Bloch-wave-based STEM image simulation with layer-by-layer representation.

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タイトル: Bloch-wave-based STEM image simulation with layer-by-layer representation.
著者: Morimura, Takao / Hasaka, Masayuki
発行日: 2009年 8月
出版者: Elsevier B.V.
引用: Ultramicroscopy, 109(9), pp.1203-1209; 2009
抄録: In a dynamical STEM image simulation by the Bloch-wave method, Allen et al. formulated a framework for calculating the cross-section for any incoherent scattering process from the inelastic scattering coefficients: thermal diffuse scattering (TDS) for high-angle annular dark-field (HAADF) and back-scattered electron (BSE) STEM, and ionization for electron energy-loss spectroscopy (EELS) and energy-dispersive X-ray spectroscopy (EDX) STEM. Furthermore, their method employed a skillfull approach for deriving the excitation amplitude and block diagonalization in the eigenvalue equation. In the present work, we extend their scheme to a layer-by-layer representation for application to inhomogeneous crystals that include precipitates, defects and atomic displacement. Calculations for a multi-layer sample of Si-Sb-Si were performed by multiplying Allen et al.'s block-diagonalized matrices. Electron intensities within the sample and EDX STEM images, as an example of the inelastic scattering, were calculated at various conditions. From the calculations, 3-dimensional STEM analysis was considered.
キーワード: Bloch wave method / EDX / HAADF / Inelastic electron scattering / Layer-by-layer / STEM
URI: http://hdl.handle.net/10069/22304
ISSN: 03043991
DOI: 10.1016/j.ultramic.2009.05.007
PubMed ID: 19525067
権利: Copyright © 2009 Elsevier B.V. All rights reserved.
資料タイプ: Journal Article
原稿種類: author
出現コレクション:060 学術雑誌論文

引用URI : http://hdl.handle.net/10069/22304



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