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β-SiCウイスカー中の積層欠陥


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Title: β-SiCウイスカー中の積層欠陥
Other Titles: Stacking Faults in β-SiC Whiskers
Authors: 岩永, 浩 / 柴田, 昇 / 勝木, 宏昭 / 江頭, 誠
Authors (alternative): Iwanaga, Hiroshi / Shibata, Noboru / Katsuki, Hiroaki / Egashira, Makoto
Issue Date: Aug-1986
Publisher: 日本セラミックス協会 / The Ceramic Society of Japan
Citation: 窯業協会誌, 94(1092), pp.900-902; 1986
Abstract: β-SiC whiskers were grown at about 1300℃ by the reaction of silicon powder and propylene in a flowing hydrogen atmosphere containing a few percent of hydrogen sulfide. The whiskers with the growth direction [111] were examined by TEM and SEM. Stacking faults observed in the whisker are classified into two types; one has the (111) fault plane perpendicular to the growth direction and the other has fault planes parallel to the (111), (111) and (111) which are not perpendicular to the growth direction. It is likely that these two types of faults have a correlation with the difference in morphology of whiskers. Their fault vector was shown to be 1/3<111> by the g・b=0 criterion.
Keywords: β-SiC whisker / Vapor phase growth / Silicon powder / Propylen / Hydrogen sulfide / Stacking fault / Fault vector
URI: http://hdl.handle.net/10069/23585
ISSN: 00090255
Relational Links: http://ci.nii.ac.jp/naid/110002313510/
Rights: 社団法人日本セラミックス協会 / 本文データは学協会の許諾に基づきCiNiiから複製したものである
Type: Journal Article
Text Version: publisher
Appears in Collections:Articles in academic journal

Citable URI : http://hdl.handle.net/10069/23585

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