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Improvement of Resolution for Electron-Acoustic Microscopy

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Title: Improvement of Resolution for Electron-Acoustic Microscopy
Other Titles: 電子線超音波顕微鏡の解像度向上への試み
Authors: Takenoshita, Hiroshi / Kobayashi, Mutsuuo
Authors (alternative): 竹野下, 寛 / 小林, 睦生
Issue Date: 31-May-1995
Publisher: 長崎大学教育学部
Citation: 長崎大学教育学部自然科学研究報告. vol.53, p.11-17; 1995
Abstract: The resolution (r) of our electron-acoustic microscopy (EAM) has been 1.2 μm≦r≦2.4 μm, when operated with electron beam chopping frequency (f) of 1 MHz, duty ratio of 50% and acceleration voltage (HV) of 30 kV. This level of r is insufficient for observation of metal-oxide-semiconductor (MOS) LSI. This problem was partly solved by improvement of a driving power unit for chopping an electron beam so that the harmonic components on the square wave off which flow in the chopping coil could be drastically suppressed. The r obtained was estimated to be r ≦ 0.8 μm at f = 1 MHz, duty ratio = 50% and HV = 19kV. If f can be further increased by this method, r would further improve, and application of EAM to nondestructive observation at the selected area, i. e., the fixed area, of MOS LSI would be come possible.
Keywords: Electron-acoustic microscopy / Ultrasonic / Nondestructive observation / Scanning electron microscopy / Device analysys
URI: http://hdl.handle.net/10069/32174
ISSN: 0386443X
Type: Departmental Bulletin Paper
Text Version: publisher
Appears in Collections:No. 53

Citable URI : http://hdl.handle.net/10069/32174

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