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Vapor Growth of SnO2 Single Crystals From SnI4 and their Growth Mechanisms


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Title: Vapor Growth of SnO2 Single Crystals From SnI4 and their Growth Mechanisms
Other Titles: Vapor Growth of SnO_2 Single Crystals From SnI_4 and their Growth Mechanisms
Authors: Hirose, Masami / Furuya, Yoshio
Issue Date: 28-Feb-1981
Publisher: 長崎大学教育学部
Citation: 長崎大学教育学部自然科学研究報告. vol.32, p.21-35; 1981
Abstract: Vapor growth of SnO2 single crystals, belonging to rutile-type crystals, has tried by the reaction of SnI4 vapor with O2 gas or H2O vapor. SnO2 single crystals more easily crystallized by hydrolysis than by oxidation of SnI4 , and the optimum temperature range of the growth region was between 1200℃ and 1250℃ in the oxidation ane between 1100℃ and 1150℃ in the hydrolysis, respectively. From the detail observations of the characteristic crystals grown by the hydrolysis, it was made clear that the leaf-type elongated by the growth of the hydrolysis, it was made clear that the leaf-type elongated by the growth of <110> needles and thickened by the deposition and diffusion on the surfaces succeeded to the elongating growth, that the pyramid-type elongated and thickened by the two dimensional layer growth and that the plate-type thickened by the two dimensional layer growth. The leaf and pyramid-types tended to crystallize to an octahedron consisting of the {101} and {011} facets though their growth mechanisms were different.
URI: http://hdl.handle.net/10069/32620
ISSN: 0386443X
Type: Departmental Bulletin Paper
Text Version: publisher
Appears in Collections:No. 32

Citable URI : http://hdl.handle.net/10069/32620

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