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Enhancement of methylmercaptan sensing response of WO3 semiconductor gas sensors by gas reactivity and gas diffusivity


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タイトル: Enhancement of methylmercaptan sensing response of WO3 semiconductor gas sensors by gas reactivity and gas diffusivity
著者: Ueda, Taro / Maeda, Takuya / Huang, Zhendong / Higuchi, Kotono / Izawa, Kuniyuki / Kamada, Kai / Hyodo, Takeo / Shimizu, Yasuhiro
発行日: 2018年11月10日
出版者: Elsevier B.V.
引用: Sensors and Actuators, B: Chemical, 273, pp.826-833; 2018
抄録: WO3-based semiconductor-type gas sensors were fabricated, and their sensing properties to methylmercaptan (CH3SH) were examined in this study. The Ru loading on WO3 was an effective way of an increase in the CH3SH response. In addition, the CH3SH response increased with a decrease in the operating temperature as well as with an increase in the thickness of the Ru-loaded WO3 sensing layer. The increase in the porosity of the Ru-loaded WO3 sensors, which were fabricated by utilizing polymethylmethacrylate microspheres as a template, was also effective in improving the CH3SH response, especially at a low temperature of 150 °C. In addition, the lamination of the Ru-loaded WO3 sensor with an α-Al2O3 film improved the CH3SH response at 200 °C. Moreover, the Ru loading on the WO3 powder increased the catalytic activities of CH3SH oxidation, and CH3SH was partially oxidized to CH3SSCH3 at temperatures less than 330 °C. It was suggested that the increase in the positively charged adsorption of the partially oxidized products onto the bottom part of the sensing layer is effective for enhancing the CH3SH response, especially at lower operating temperatures.
キーワード: CH3SH / CH3SSCH3 / positively charged adsorption / Ru-loaded WO3 / Semiconductor-type gas sensor
URI: http://hdl.handle.net/10069/38519
ISSN: 09254005
DOI: 10.1016/j.snb.2018.06.122
権利: © 2018 Elsevier B.V. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
資料タイプ: Journal Article
原稿種類: author
出現コレクション:060 学術雑誌論文

引用URI : http://hdl.handle.net/10069/38519

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