DSpace university logo mark
Japanese | English 

NAOSITE : Nagasaki University's Academic Output SITE > シンポジウム等 > Nagasaki Symposium on Nano-Dynamics 2008 (NSND2008) >

Electrodeposition of Zinc-Telluride Compound Semiconductors

ファイル 記述 サイズフォーマット
NSND2008_P26.pdf250.52 kBAdobe PDF本文ファイル

タイトル: Electrodeposition of Zinc-Telluride Compound Semiconductors
著者: Kawanaka, Y. / Mizumoto, M. / Ohgai, Takeshi / Kagawa, A. / Takao, K. / Tanaka, Y. / Sumita, S.
発行日: 2008年 1月29日
引用: Nagasaki Symposium on Nano-Dynamics 2008 (NSND2008), pp.61-62
抄録: Zinc-telluride compound semiconductors were electrodeposited from acidic aqueous solution. Under potential deposition (UPD) of zinc was observed during the co-deposition of zinc and tellurium. UPD of zinc was promoted by rising the solution temperature up to 353K. Band gap energy of annealed zinc-telluride films with almost ideal stoichiometric composition (Zn:Te=1:1) were close to 2.26 eV.
記述: Nagasaki Symposium on Nano-Dynamics 2008 (NSND2008) 平成20年1月29日(火)於長崎大学 Poster Presentation
キーワード: zinc, telluride / compound semiconductor / under potential deposition
URI: http://hdl.handle.net/10069/9856
資料タイプ: Conference Paper
出現コレクション:Nagasaki Symposium on Nano-Dynamics 2008 (NSND2008)

引用URI : http://hdl.handle.net/10069/9856



Valid XHTML 1.0! Copyright © 2006-2015 長崎大学附属図書館 - お問い合わせ Powerd by DSpace